Electrical resistivity of single crystals of LaFeAsO under applied pressure

Measurements of electrical resistivity under applied pressure were performed on single-crystalline samples of LaFeAsO grown in a molten NaAs flux. We observe a smooth suppression of spin-density wave order under nearly hydrostatic applied pressures up to 2.6 GPa and in quasihydrostatic pressures up to 14.7 GPa. Similar to some of the other reports on single and polycrystalline samples of LaFeAsO, these crystals exhibit a resistivity that increases as temperature is lowered. By fitting an Arrhenius law to the the semiconducting-like temperature dependence of the electrical resistivity, we extract an energy gap that is suppressed with pressure and vanishes near 10 GPa. This is accompanied by the emergence of a metallic temperature dependence of the electrical resistivity. A similar behavior is also observed in diamond anvil cell experiments carried out to similar to 37 GPa. Complete transitions to a bulk superconducting phase are not observed in any of the experiments.