Formation and microwave dielectric properties of Sr(Ga0.5Ta0.5) O-3-based complex perovskites

被引：30

作者：

Takahashi, J ^{[1
]}

Kageyama, K ^{[1
]}

Fujii, T ^{[1
]}

Yamada, T ^{[1
]}

Kodaira, K ^{[1
]}

机构：

[1] SUMITOMO SPECIAL MET CO LTD,R&D DIV,SHIMAMOTO,OSAKA 618,JAPAN

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 1997年 / 8卷 / 02期

关键词：

D O I：

10.1023/A:1018513222864

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The Sr(Ga0.5Ta0.5)O-3-based perovskites with O2- and/or Sr2+ vacancies were formed by changing the A-site and/or B-site cation ratios. The Sr-deficient perovskites with a limited composition of Sr-0.86(Ga0.36Ta0.64)O-3 could be obtained, whereas oxygen vacancies were hardly created. The B'-site Ga3+ cation could be replaced with large Sc3+, In3+, Y3+, Nd3+ and La3+. The crystal symmetry of the complex perovskites changed from cubic (B' = Ga3+ In3+) to tetragonal (B' = La3+) through rhombohedral (B'=Y3+, Nd3+). The dielectric permittivities of these ceramics indicated no distinct dependence on the B'-site cation species. The temperature coefficient of permittivity might be associated with the symmetry change of the perovskite phases. Higher microwave Of values, > Qf=38 000 GHz, were obtained for our complex perovskite ceramics, except with B'=La3+.

引用

页码：79 / 84

页数：6