A Wideband Differential Linear Low-Noise Transconductance Amplifier With Active-Combiner Feedback in Complementary MGTR Configurations

被引:36
作者
Guo, Benqing [1 ]
Gong, Jing [2 ]
Wang, Yao [3 ]
机构
[1] Chengdu Univ Informat Technol, Coll Commun Engn, Chengdu 610225, Peoples R China
[2] Sichuan Univ, West China Hosp, Chengdu 610041, Peoples R China
[3] Zhengzhou Univ, Sch Informat Engn, Zhengzhou 450001, Peoples R China
基金
中国国家自然科学基金;
关键词
Wideband; low-noise transconductance amplifier (LNTA); linearity; noise; active-combiner feedback; multi-gated transistor (MGTR); complementary configurations; RECEIVER FRONT-END; EMPLOYING NOISE; CMOS LNA; LINEARIZATION; WIRELESS; P-1DB;
D O I
10.1109/TCSI.2020.3029298
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A wideband differential linear low-noise transconductance amplifier (LNTA) is proposed for SAW-less applications. An active combiner provides a dual-loop feedback for wideband matching with power efficiency. Operating as an auxiliary common source (CS) stage, complementary multi-gated transistor (MGTR) configurations are employed to compensate for the second- and third-order nonlinearity of the main CS stage, improving small-signal linearity. Large-signal linearity is also enhanced due to Class AB configurations. Additionally, the push-pull operation of the main CS stage and the auxiliary CS stage preserves good large-signal input matching performance. Implemented in a 0.18-mu m CMOS process, the measured LNTA chip provides a minimum noise figure (NF) of 2.5 dB, and a maximum transconductance value of 76.7 mS from 0.1 to 3.1 GHz. On average, an input 1-dB compression point (IP1 dB) of 2.3 dBm and an input third-order intercept point (IIP3) of 17.8 dBm are obtained, respectively. The blocker NF is 4.0 dB under a 0 dBm blocker injection while the S-11 < -10 dB is maintained even with the blocker input of -3.1 dBm. The LNTA core only draws 13.3 mA from a 1.8 V supply.
引用
收藏
页码:224 / 237
页数:14
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