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Two-Dimensional and Screw Growth of MoS2 Films in the Process of Chemical Deposition from the Gas Phase
被引:2
|作者:
Romanov, R., I
[1
]
Myakota, D., I
[1
]
Chuprik, A. A.
[1
]
Novikov, S. M.
[1
]
Lebedinskii, Yu Yu
[1
]
Chernikova, A. G.
[1
]
Markeev, A. M.
[1
]
机构:
[1] State Univ, Moscow Inst Phys & Technol, Dolgoprudnyi 141701, Russia
基金:
俄罗斯科学基金会;
俄罗斯基础研究基金会;
关键词:
molybdenum disulfide;
chemical deposition;
gas phase;
thin films;
CVD;
HYDROGEN EVOLUTION CATALYSTS;
ENERGY-DISSIPATION;
D O I:
10.1134/S1070427219050021
中图分类号:
O69 [应用化学];
学科分类号:
081704 ;
摘要:
The method of deposition from the gas phase is applied to the synthesis of thin films of molybdenum disulfide. It was established that varying the rate of temperature rise in the course of the synthesis affects the character of growth and the structure of the layers formed. With a decrease in the rate of temperature rise, a transition from standard two-dimensional to screw growth of MoS2 films is observed. MoS2 films produced as a result of screw growth have a high density of edge states, which makes them promising for use in catalysis.
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页码:596 / 601
页数:6
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