Simulation Investigation of Slant Field Plate T-gate AlGaN/GaN HEMT for High-Frequency Power Applications

被引：2

作者：

Du, Xiang ^{[1
]}

Mi, Minhan ^{[1
]}

Wang, Pengfei ^{[1
]}

Ma, Xiaohua ^{[1
]}

机构：

[1] Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond T, Xian 710071, Peoples R China

来源：

2022 IEEE MTT-S INTERNATIONAL MICROWAVE WORKSHOP SERIES ON ADVANCED MATERIALS AND PROCESSES FOR RF AND THZ APPLICATIONS, IMWS-AMP | 2022年

基金：

中国博士后科学基金; 国家重点研发计划; 中国国家自然科学基金;

关键词：

GaN; SFP T-gate HEMTs; millimeter-wave; E-field distribution; breakdown voltage; DESIGN;

D O I：

10.1109/IMWS-AMP54652.2022.10107069

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A slant field plate T-gate AlGaN/GaN HEMT (SFP T-gate HEMT) was proposed to improve the breakdown voltage of GaN-based millimeter-wave ( mmW) devices. Simulation results verified that the peak electric field (E-field) was alleviated by the SFP with a 24% reduction than that of a conventional T-gate. Meanwhile, the SFP T-gate HEMTs demonstrated a breakdown voltage of 90V, which was twice the value of conventional T-gate HEMTs. Due to the significant improvement in breakdown voltage, the SFP T-gate HEMTs yielded higher figure-of- merits (f(T)center dot V-BK=8.6THz center dot V and f(max)center dot V-BK=29THz center dot V) than that of the conventional T-gate HEMTs (f(T)center dot V-BK=7.5THz center dot V and f(max)center dot V-BK= 19THz center dot V), illustrating its massive potential in high E-field application at millimeter-wave band.

引用

页数：3

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