Behavior of electrically active point defects in irradiated MOCVD n-GaN

被引：6

作者：

Emtsev, VV

Davydov, VY

Kozlovskii, VV

Poloskin, DS

Smirnov, AN

Shmidt, NM

Usikov, AS

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[2] Leningrad State Tech Univ, St Petersburg 195251, Russia

来源：

PHYSICA B-CONDENSED MATTER | 1999年 / 273-4卷

关键词：

gallium nitride; irradiation; defect interaction;

D O I：

10.1016/S0921-4526(99)00416-0

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Formation and annealing of radiation-induced defects in doped and nominally undoped n-GaN are investigated by means of electrical measurements and Raman spectroscopy. The production rate of defects turned out to be dependent on the dopant concentration. This suggests that at least one kind of native defects is involved in impurity-defect interactions at room temperature. Two prominent stages of defect annealing are revealed. The annealing processes at T greater than or equal to 100 degrees C are associated with mobile native defects. A considerable fraction of radiation defects is still present in the materials after annealing to T greater than or equal to 750 degrees C. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：101 / 104

页数：4

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