Crystal structure of LaCuOS1-xSex oxychalcogenides

被引:45
作者
Ueda, K [1 ]
Hosono, H [1 ]
机构
[1] Tokyo Inst Technol, Mat & Struct Lab, Yokohama, Kanagawa 2268503, Japan
关键词
LaCuOS; LaCuOSe; layered oxychalcogenide; wide-gap p-type semiconductor; Rietveld analysis;
D O I
10.1016/S0040-6090(02)00198-0
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Solid solutions of LaCuOS1-xSex oxychalcogenides were prepared by solid-state reaction. The crystal structure of the solid solutions was refined by the Rietveld analysis. The Rietveld analysis revealed that S or Se ions dissolve completely in the system of LaCuOS-LaCuOSe. The crystal structure remains almost unchanged among the solid solutions except for a slight variation in the lattice constants. A difference in ionic radius between S and Se ions is responsible for the variation in the lattice constants. Long interatomic distances between La and S/Se estimated from the refined structure supported that the crystal structure of LaCuOS1-xSex can be visualized as a layered structure composed of La-0 and Cu-S/Cu-Se layers. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:115 / 118
页数:4
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