Structural Transition and Band Gap Tuning of Cu2(Zn,Fe)SnS4 Chalcogenide for Photovoltaic Application

被引:96
作者
Khadka, Dhruba B. [1 ]
Kim, JunHo [1 ]
机构
[1] Incheon Natl Univ, Dept Phys, Inchon 406772, South Korea
基金
新加坡国家研究基金会;
关键词
CU2ZNSNS4; THIN-FILMS; SOLAR-CELL; KESTERITE CU2ZNSNS4; STANNITE; EFFICIENCY; CU2FESNS4; SULFURIZATION; NANOCRYSTALS; ZN; DEPOSITION;
D O I
10.1021/jp503678h
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Polycrystalline Cu2ZnzFe1-zSnS4 (CZFTS) thin films have been fabricated using chemical spray pyrolysis accompanied by postsulfurization. The postsulfurized CZFTS films demonstrate promising morphological, structural, and optical properties for photoabsorber in thin film photovoltaics. The structural transition from stannite to kesterite is found with the increase of zinc content in CZFTS alloy by using X-ray diffraction and Raman spectroscopy. The band gap energies of postsulfurized CZFTS films are observed to be tuned from similar to 1.36 +/- 0.02 to 1.51 +/- 0.02 eV in parabolic-increase trend with increasing Zn content (0 <= z <= 1). A small bowing constant b similar to 0.1 +/- 0.05 eV deduced from band gap bowing model implicates good miscibility of alloyed constituents in the host crystal lattice.
引用
收藏
页码:14227 / 14237
页数:11
相关论文
共 66 条
[1]   Hierarchical porous quaternary Cu-Fe-Sn-S hollow chain microspheres: rapid microwave nonaqueous synthesis, growth mechanism, and their efficient removal of organic dye pollutant in water [J].
Ai, Lunhong ;
Jiang, Jing .
JOURNAL OF MATERIALS CHEMISTRY, 2012, 22 (38) :20586-20592
[2]  
[Anonymous], PHYS REV B
[3]  
[Anonymous], 2005, PHYS CHEM MINER
[4]  
[Anonymous], ENV SCI TECHNOL, DOI DOI 10.1021/ES8019534
[5]   Hydrazine-Processed Ge-Substituted CZTSe Solar Cells [J].
Bag, Santanu ;
Gunawan, Oki ;
Gokmen, Tayfun ;
Zhu, Yu ;
Mitzi, David B. .
CHEMISTRY OF MATERIALS, 2012, 24 (23) :4588-4593
[6]   Determination of the band gap depth profile of the penternary Cu(In(1-X)GaX)(SYSe(1-Y))2 chalcopyrite from its composition gradient [J].
Bär, M ;
Bohne, W ;
Röhrich, J ;
Strub, E ;
Lindner, S ;
Lux-Steiner, MC ;
Fischer, CH ;
Niesen, TP ;
Karg, F .
JOURNAL OF APPLIED PHYSICS, 2004, 96 (07) :3857-3860
[7]   Structural, optical and electrical properties of β-In2S3-3xO3x thin films obtained by PVD [J].
Barreau, N ;
Marsillac, S ;
Albertini, D ;
Bernede, JC .
THIN SOLID FILMS, 2002, 403 :331-334
[8]   Raman analysis of monoclinic Cu2SnS3 thin films [J].
Berg, Dominik M. ;
Djemour, Rabie ;
Guetay, Levent ;
Siebentritt, Susanne ;
Dale, Phillip J. ;
Fontane, Xavier ;
Izquierdo-Roca, Victor ;
Perez-Rodriguez, Alejandro .
APPLIED PHYSICS LETTERS, 2012, 100 (19)
[9]   ELECTRONIC-STRUCTURE OF ZNS, ZNSE, ZNTE, AND THEIR PSEUDOBINARY ALLOYS [J].
BERNARD, JE ;
ZUNGER, A .
PHYSICAL REVIEW B, 1987, 36 (06) :3199-3228
[10]   EPR and SQUID magnetometry study of Cu2FeSnS4 (stannite) and Cu2ZnSnS4 (kesterite) [J].
Bernardini, GP ;
Borrini, D ;
Caneschi, A ;
Di Benedetto, F ;
Gatteschi, D ;
Ristori, S ;
Romanelli, M .
PHYSICS AND CHEMISTRY OF MINERALS, 2000, 27 (07) :453-461