Electric-field effects in optically generated spin transport

被引：1
作者：
Miah, M. Idrish [1 ,2 ,3 ]
机构：
[1] Griffith Univ, Nanoscale Sci & Technol Ctr, Brisbane, Qld 4111, Australia
[2] Griffith Univ, Sch Biomol & Phys Sci, Brisbane, Qld 4111, Australia
[3] Univ Chittagong, Dept Phys, Chittagong 4331, Bangladesh
来源：
PHYSICS LETTERS A | 2009年 / 373卷 / 23-24期
关键词：
Semiconductors; Optical properties; Electronic transport; GAAS; SEMICONDUCTORS; SPINTRONICS;
D O I：
10.1016/j.physleta.2009.04.021
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Transport of spin-polarized electrons in semiconductors is studied experimentally. Spins are generated by optical excitation because of the selection rules governing optical transitions from heavy-hole and light-hole states to conduction-band states. Experiments designed for the control of spins in semiconductors investigate the bias-dependent spin transport process and detect the spin-polarized electrons during transport. A strong bias dependence is observed. The electric-field effects on the spin-polarized electron transport are also found to be depended on the excitation photon energy and temperature. Based on a field-dependent spin relaxation mechanism, the electric-field effects in the transport process are discussed. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码：2097 / 2100
页数：4
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