Anomalous phase transition of InN nanowires under high pressure

被引:5
|
作者
Tang Shun-Xi [1 ]
Zhu Hong-Yang [1 ]
Jiang Jun-Ru [1 ]
Wu Xiao-Xin [1 ]
Dong Yun-Xuan [1 ]
Zhang Jian [1 ]
Yang Da-Peng [2 ]
Cui Qi-Liang [1 ]
机构
[1] Jilin Univ, State Key Lab Superhard Mat, Changchun 130012, Peoples R China
[2] Jilin Univ, Coll Instrumentat & Elect Engn, Changchun 130012, Peoples R China
基金
中国国家自然科学基金;
关键词
InN nanowire; phase transition; x-ray diffraction; III-V NITRIDES; GROWTH; STABILITY; GAN;
D O I
10.1088/1674-1056/24/9/096101
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Uniform InN nanowires were studied under pressures up to 35.5 GPa by using in situ synchrotron radiation x-ray diffraction technique at room temperature. An anomalous phase transition behavior has been discovered. Contrary to the results in the literature, which indicated that InN undergoes a fully reversible phase transition from the wurtzite structure to the rocksalt type structure, the InN nanowires in this study unusually showed a partially irreversible phase transition. The released sample contained the metastable rocksalt phase as well as the starting wurtzite one. The experimental findings of this study also reveal the potentiality of high pressure techniques to synthesize InN nanomaterials with the metastable rocksalt type structure, in addition to the generally obtained zincblende type one.
引用
收藏
页数:4
相关论文
共 50 条
  • [1] Anomalous phase transition of InN nanowires under high pressure
    汤顺熙
    祝洪洋
    江俊儒
    武晓鑫
    董蕴萱
    张剑
    杨大鹏
    崔啟良
    Chinese Physics B, 2015, 24 (09) : 355 - 358
  • [2] Structural stability and Raman scattering of InN nanowires under high pressure
    Yao, L. D.
    Luo, S. D.
    Shen, X.
    You, S. J.
    Yang, L. X.
    Zhang, S. J.
    Jiang, S.
    Li, Y. C.
    Liu, J.
    Zhu, K.
    Liu, Y. L.
    Zhou, W. Y.
    Chen, L. C.
    Jin, C. Q.
    Yu, R. C.
    Xie, S. S.
    JOURNAL OF MATERIALS RESEARCH, 2010, 25 (12) : 2330 - 2335
  • [3] Structural phase transitions and magnetism of Cr doped InN under high pressure
    Li, Lu
    Li, Xiaolei
    Wang, Tengfei
    Li, Dong
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2022, 142
  • [4] Structural phase transformations of GaN and InN under high pressure
    Saib, S.
    Bouarissa, N.
    PHYSICA B-CONDENSED MATTER, 2007, 387 (1-2) : 377 - 382
  • [5] Phase transition of Zn2SnO4 nanowires under high pressure
    Shen, X.
    Shen, J.
    You, S. J.
    Yang, L. X.
    Tang, L. Y.
    Li, Y. C.
    Liu, J.
    Yang, H.
    Zhu, K.
    Liu, Y. L.
    Zhou, W. Y.
    Jin, C. Q.
    Yu, R. C.
    Xie, S. S.
    JOURNAL OF APPLIED PHYSICS, 2009, 106 (11)
  • [6] Phase transitions and elastic properties of InN1-xBix under high pressure
    Liu, Gang
    Zhang, Jianhang
    Zhu, Pengfei
    Zhang, Tao
    Guo, Yanliang
    Li, Shanjun
    Chen, Xianchun
    Lu, Pengfei
    PHASE TRANSITIONS, 2019, 92 (10) : 889 - 898
  • [7] Semiconductor–metal transition in GaAs nanowires under high pressure
    梁艺蓝
    姚震
    殷雪彤
    王鹏
    李利霞
    潘东
    李海燕
    李全军
    刘冰冰
    赵建华
    Chinese Physics B, 2019, 28 (07) : 406 - 410
  • [8] Equation of state and phase transition of antigorite under high pressure and high temperature
    Yang, Cuiping
    Inoue, Toru
    Yamada, Akihiro
    Kikegawa, Takumi
    Ando, Jun-ichi
    PHYSICS OF THE EARTH AND PLANETARY INTERIORS, 2014, 228 : 56 - 62
  • [9] Structural, electronic and vibrational properties of InN under high pressure
    Saoud, Fatma Saad
    Plenet, Jean Claude
    Henini, Mohamed
    PHYSICA B-CONDENSED MATTER, 2012, 407 (06) : 1008 - 1013
  • [10] Semiconductor-metal transition in GaAs nanowires under high pressure
    Liang, Yi-Lan
    Yao, Zhen
    Yin, Xue-Tong
    Wang, Peng
    Li, Li-Xia
    Pan, Dong
    Li, Hai-Yan
    Li, Quan-Jun
    Liu, Bing-Bing
    Zhao, Jian-Hua
    CHINESE PHYSICS B, 2019, 28 (07)