Current induced doping in graphene-based transistor with asymmetrical contact barriers

被引：5

作者：

Chen, Wei ^{[1
]}

Qin, Shiqiao ^{[1
,2
]}

Zhang, Xue-Ao ^{[1
,2
]}

Zhang, Sen ^{[1
]}

Fang, Jingyue ^{[1
]}

Wang, Guang ^{[1
]}

Wang, Chaocheng ^{[3
]}

Wang, Li ^{[1
,3
]}

Chang, Shengli ^{[1
,2
]}

机构：

[1] Natl Univ Def Technol, Coll Sci, Changsha 410073, Hunan, Peoples R China

[2] Natl Univ Def Technol, State Key Lab High Performance Comp, Changsha 410073, Hunan, Peoples R China

[3] Nanchang Univ, Dept Phys, Nanchang 330031, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 08期

基金：

中国国家自然科学基金;

关键词：

Carrier concentration - Graphene transistors - Drain current;

D O I：

10.1063/1.4867018

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The metal/graphene contacts play a very important role in the performance of graphene-based devices. We report here a unique observation of current-induced doping in graphene transistors. The charge carrier type and the concentration in graphene can be manipulated by the current flowing through the graphene device, arising from the asymmetrical metal/graphene barriers between the source and drain electrodes and the accompanied current crowding effect. (C) 2014 AIP Publishing LLC.

引用

页数：4

共 25 条

[1] A Photothermoelectric Effect in Graphene
Basko, Denis
[J]. SCIENCE, 2011, 334 (6056) : 610 - 611
[2] Transport through normal-metal-graphene contacts
Blanter, Ya. M.
Martin, Ivar
[J]. PHYSICAL REVIEW B, 2007, 76 (15)
[3] Bonaccorso F, 2010, NAT PHOTONICS, V4, P611, DOI [10.1038/nphoton.2010.186, 10.1038/NPHOTON.2010.186]
[4] The nonlinear optical properties of coupling and decoupling graphene layers
Chen, Wei
Wang, Guang
Qin, Shiqiao
Wang, Chaocheng
Fang, Jingyue
Qi, Junli
Zhang, Xueao
Wang, Li
Jia, Honghui
Chang, Shengli
[J]. AIP ADVANCES, 2013, 3 (04)
[5] Franklin AD, 2010, NAT NANOTECHNOL, V5, P858, DOI [10.1038/nnano.2010.220, 10.1038/NNANO.2010.220]
[6] The rise of graphene
Geim, A. K.
Novoselov, K. S.
[J]. NATURE MATERIALS, 2007, 6 (03) : 183 - 191
[7] Doping graphene with metal contacts
Giovannetti, G.
Khomyakov, P. A.
Brocks, G.
Karpan, V. M.
van den Brink, J.
Kelly, P. J.
[J]. PHYSICAL REVIEW LETTERS, 2008, 101 (02)
[8] Grosse KL, 2011, NAT NANOTECHNOL, V6, P287, DOI [10.1038/NNANO.2011.39, 10.1038/nnano.2011.39]
[9] Current annealing and electrical breakdown of epitaxial graphene
Hertel, S.
Kisslinger, F.
Jobst, J.
Waldmann, D.
Krieger, M.
Weber, H. B.
[J]. APPLIED PHYSICS LETTERS, 2011, 98 (21)
[10] Specific contact resistance at metal/carbon nanotube interfaces
Jackson, Roderick
Graham, Samuel
[J]. APPLIED PHYSICS LETTERS, 2009, 94 (01)

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