Defect characterization of electrically degraded ZnSe based laser diodes

被引：1

作者：

Kröger, R ^{[1
]}

Roventa, E ^{[1
]}

Gust, A ^{[1
]}

Ueta, A ^{[1
]}

Klude, M ^{[1
]}

Hummel, D ^{[1
]}

Ryder, P ^{[1
]}

机构：

[1] Univ Bremen, Inst Solid State Phys, D-28359 Bremen, Germany

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2004年 / 201卷 / 04期

关键词：

D O I：

10.1002/pssa.200309034

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The degradation of the optical active region of a CdSe/ZnSe based laser diode was analyzed in detail by use of transmission electron microscopy. The investigated structure contained a separate confinement structure in the active region and was degraded by operating the device below the lasing threshold. The defect formation is connected with a local relaxation of the quantum well and a Cd outdiffusion occurring along extended defects, which are confined to the quantum well. These defects are more pronounced into the p-type side of the laser diode. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：R28 / R30

页数：3

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