Defect characterization of electrically degraded ZnSe based laser diodes

被引：1
|
作者：
Kröger, R [1 ]
Roventa, E [1 ]
Gust, A [1 ]
Ueta, A [1 ]
Klude, M [1 ]
Hummel, D [1 ]
Ryder, P [1 ]
机构：
[1] Univ Bremen, Inst Solid State Phys, D-28359 Bremen, Germany
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2004年 / 201卷 / 04期
关键词：
D O I：
10.1002/pssa.200309034
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The degradation of the optical active region of a CdSe/ZnSe based laser diode was analyzed in detail by use of transmission electron microscopy. The investigated structure contained a separate confinement structure in the active region and was degraded by operating the device below the lasing threshold. The defect formation is connected with a local relaxation of the quantum well and a Cd outdiffusion occurring along extended defects, which are confined to the quantum well. These defects are more pronounced into the p-type side of the laser diode. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：R28 / R30
页数：3
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