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Annealing induced phase transformations in amorphous As2S3 films
被引:51
作者:
Wang, R. P.
[1
]
Madden, S. J.
Zha, C. J.
Rode, A. V.
Luther-Davies, B.
机构:
[1] Australian Natl Univ, Ctr Ultrahigh Bandwidth Devices Opt Syst, Laser Phys Ctr, Canberra, ACT 0200, Australia
[2] Australian Natl Univ, Res Sch Phys Sci & Engn, Canberra, ACT 0200, Australia
基金:
澳大利亚研究理事会;
关键词:
D O I:
10.1063/1.2353787
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
Amorphous arsenic sulphide (As2S3) films prepared by ultrafast pulsed laser deposition have been vacuum annealed at a range of different temperatures. Measurements of the glass transition temperature indicate that a crystallization process initiates at annealing temperatures around 170 degrees C. In combination with Raman scattering analysis, we conclude that phase separation is intrinsic for our as-deposited films. During annealing two sorts of phase transformation are identified: one between different amorphous polymorphs, and another from the amorphous to a crystalline state. We point out a correlation between these two types of transformation and two characteristic time scales identified from measurements of the relaxation of the refractive index, and explain the Arrhenius and non-Arrhenius behaviors leading to the observed temporal characteristics. (c) 2006 American Institute of Physics.
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