Negative-tone chemically-amplified resist development for high resolution hybrid lithography

被引：4
|
作者：
Landis, S
Pauliac, S
Hanawa, R
Suetsugu, M
Akita, M
机构：
[1] CEA, DTS, LETI, F-38054 Grenoble 9, France
[2] Sumitomo Chem Co Ltd, IT Related Chem Res Lab, Photoresist Grp, Konohana Ku, Osaka 5548558, Japan
来源：
MICROELECTRONIC ENGINEERING | 2004年 / 73-4卷
关键词：
ebeam lithography; chemical amplified resist; ultra high resolution lithography;
D O I：
10.1016/j.mee.2004.02.052
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Experimental negative-tone chemically-amplified resist formulations have been designed to reach sub-30 nm resolution in electron-beam lithography. With these formulations based on Sumitomo NEB-33 commercial platform resist, we achieved 20 nm isolated line resolution thanks to process optimization. Optical 248 nm exposures, were performed as well, leading to patterns with high side-walls roughness. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：271 / 277
页数：7
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