Color-dependent degradation of high-brightness AlGaInP LEDs

被引：5

作者：

Altieri, P ^{[1
]}

Jaeger, A ^{[1
]}

Windisch, R ^{[1
]}

Linder, N ^{[1
]}

Stauss, P ^{[1
]}

Oberschmid, R ^{[1
]}

Streubel, K ^{[1
]}

机构：

[1] OSRAM Opto Semicond, D-93049 Regensburg, Germany

来源：

PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES XII | 2004年 / 5349卷

关键词：

light-emitting devices; device reliability; AlGaInP; quantum efficiency; recombination mechanisms;

D O I：

10.1117/12.529209

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Operation-induced degradation of internal quantum efficiency of high-brightness (AlxGa1-x)(0.5)In0.5P light-emitting devices (LEDs) is analysed experimentally and theoretically. A test series of LEDs was grown by MOCVD with identical layer sequence but different Aluminum content x in the active AlGaInP layer resulting in devices emitting light between 644 nm and 560 nm. The analysis yields the wavelength dependence of both the nonradiative recombination constant A as well as the carrier leak-age parameter C of devices before and after aging. While test devices with lambda>615 nm are very stable, LEDs with shorter emission wavelengths exhibit both an increase of A and a slight decrease of C upon aging. Possible degradation mechanisms are discussed.

引用

页码：416 / 425

页数：10

共 12 条

[1]

ALTIERI P, IN PRESS

[2] DESIGN PARAMETERS OF FREQUENCY-RESPONSE OF GAAS-(GA,AL)AS DOUBLE HETEROSTRUCTURE LEDS FOR OPTICAL COMMUNICATIONS [J].