Screening-induced temperature-dependent transport in two-dimensional graphene

被引：229

作者：

Hwang, E. H. ^{[1
]}

Das Sarma, S. ^{[1
]}

机构：

[1] Univ Maryland, Dept Phys, Condensed Matter Theory Ctr, College Pk, MD 20742 USA

来源：

PHYSICAL REVIEW B | 2009年 / 79卷 / 16期

关键词：

dielectric function; graphene; high-temperature effects; thermal conductivity; two-dimensional electron gas; METAL-INSULATOR-TRANSITION; CHARGED-IMPURITY-SCATTERING; DIMENSIONAL ELECTRON-GAS; SILICON; SYSTEM; B=0;

D O I：

10.1103/PhysRevB.79.165404

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We calculate the temperature-dependent conductivity of graphene in the presence of randomly distributed Coulomb impurity charges arising from the temperature-dependent screening of the Coulomb disorder without any phonons. The purely electronic temperature dependence of our theory arises from two independent mechanisms: the explicit temperature dependence of the finite-temperature dielectric function epsilon(q,T) and the finite-temperature energy averaging of the transport scattering time. We find that the calculated temperature-dependent conductivity is nonmonotonic, decreasing with temperature at low temperatures, and increasing at high temperatures. We provide a critical comparison with the corresponding physics in semiconductor-based parabolic band 2D electron-gas systems.

引用

页数：12

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