Screening-induced temperature-dependent transport in two-dimensional graphene

被引:223
作者
Hwang, E. H. [1 ]
Das Sarma, S. [1 ]
机构
[1] Univ Maryland, Dept Phys, Condensed Matter Theory Ctr, College Pk, MD 20742 USA
来源
PHYSICAL REVIEW B | 2009年 / 79卷 / 16期
关键词
dielectric function; graphene; high-temperature effects; thermal conductivity; two-dimensional electron gas; METAL-INSULATOR-TRANSITION; CHARGED-IMPURITY-SCATTERING; DIMENSIONAL ELECTRON-GAS; SILICON; SYSTEM; B=0;
D O I
10.1103/PhysRevB.79.165404
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We calculate the temperature-dependent conductivity of graphene in the presence of randomly distributed Coulomb impurity charges arising from the temperature-dependent screening of the Coulomb disorder without any phonons. The purely electronic temperature dependence of our theory arises from two independent mechanisms: the explicit temperature dependence of the finite-temperature dielectric function epsilon(q,T) and the finite-temperature energy averaging of the transport scattering time. We find that the calculated temperature-dependent conductivity is nonmonotonic, decreasing with temperature at low temperatures, and increasing at high temperatures. We provide a critical comparison with the corresponding physics in semiconductor-based parabolic band 2D electron-gas systems.
引用
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页数:12
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