Operating principle of a three-terminal domain wall device with perpendicularly magnetized Ta/CoFeB/MgO free layer and underlying hard magnets

被引：7

作者：

Tanigawa, Hironobu ^{[1
]}

Suzuki, Tetsuhiro ^{[1
]}

Suemitsu, Katsumi ^{[1
]}

Ohshima, Norikazu ^{[1
]}

Kitamura, Takuya ^{[1
]}

Ohkochi, Takuo ^{[2
]}

Kotsugi, Masato ^{[2
]}

Kinoshita, Toyohiko ^{[2
]}

Koyama, Tomohiro ^{[3
]}

Chiba, Daichi ^{[3
,4
]}

Yoshimura, Yoko ^{[5
]}

Ueda, Kohei ^{[5
]}

Ono, Teruo ^{[5
]}

Kariyada, Eiji ^{[1
]}

机构：

[1] Renesas Elect Corp, Prod & Technol Unit, Sagamihara, Kanagawa 2525298, Japan

[2] Japan Synchrotron Radiat Res Inst, Sayo, Hyogo 6795198, Japan

[3] Univ Tokyo, Fac Engn, Dept Appl Phys, Bunkyo Ku, Tokyo 1138656, Japan

[4] Japan Sci & Technol Agcy, PRESTO, Kawaguchi, Saitama 3220012, Japan

[5] Kyoto Univ, Inst Chem Res, Uji, Kyoto 6110011, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2014年 / 53卷 / 06期

基金：

日本学术振兴会;

关键词：

SPIN-TORQUE; MOTION; NANOWIRES; DYNAMICS; FILMS; MGO;

D O I：

10.7567/JJAP.53.063002

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The behavior of a three-terminal domain wall (DW) device with a perpendicularly magnetized CoFeB free layer and underlying hard magnets was investigated. In a Ta/CoFeB/MgO free layer without hard magnets, a current-induced DW motion in the direction of electron flow was observed. In a device having a hard magnet under each end of the free layer, we found that a DW nucleated by injecting current played an important role in the switching of magnetization. We concluded that the switching of magnetization in our device is due to the displacement in the direction of electron flow of the DW created by current. After deriving the principle of operation through experiments, we describe a way to reduce the current required for writing by increasing the thickness of the hard magnets. (C) 2014 The Japan Society of Applied Physics

引用

页数：7

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