Determination of recombination coefficients for nanocrystalline silicon embedded in hydrogenated amorphous silicon

被引：14
|
作者：
He, Wei [1 ]
Zakar, Ammar [1 ]
Roger, Thomas [1 ]
Yurkevich, Igor V. [2 ]
Kaplan, Andre [1 ]
机构：
[1] Univ Birmingham, Sch Phys & Astron, Birmingham B15 2TT, W Midlands, England
[2] Aston Univ, Nonlinear & Complex Res Grp, Birmingham B4 7ET, W Midlands, England
来源：
OPTICS LETTERS | 2015年 / 40卷 / 16期
基金：
英国工程与自然科学研究理事会;
关键词：
AUGER RECOMBINATION; MICROCRYSTALLINE SILICON; TEMPERATURE-DEPENDENCE; DYNAMICS;
D O I：
10.1364/OL.40.003889
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The spectroscopic pump-probe reflectance method was used to investigate recombination dynamics in samples of nanocrystalline silicon embedded in a matrix of hydrogenated amorphous silicon. We found that the dynamics can be described by a rate equation including linear and quadratic terms corresponding to recombination processes associated with impurities and impurity-assisted Auger ionization, respectively. We determined the values of the recombination coefficients using the initial concentrations method. We report the coefficients of 1.5 x 10(11) s(-1) and 1.1 x 10(-10) cm(3) s(-1) for the impurity-assisted recombination and Auger ionization, respectively. (C) 2015 Optical Society of America
引用
收藏
页码：3889 / 3892
页数：4
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