Determination of recombination coefficients for nanocrystalline silicon embedded in hydrogenated amorphous silicon

被引：14

作者：

He, Wei ^{[1
]}

Zakar, Ammar ^{[1
]}

Roger, Thomas ^{[1
]}

Yurkevich, Igor V. ^{[2
]}

Kaplan, Andre ^{[1
]}

机构：

[1] Univ Birmingham, Sch Phys & Astron, Birmingham B15 2TT, W Midlands, England

[2] Aston Univ, Nonlinear & Complex Res Grp, Birmingham B4 7ET, W Midlands, England

来源：

OPTICS LETTERS | 2015年 / 40卷 / 16期

基金：

英国工程与自然科学研究理事会;

关键词：

AUGER RECOMBINATION; MICROCRYSTALLINE SILICON; TEMPERATURE-DEPENDENCE; DYNAMICS;

D O I：

10.1364/OL.40.003889

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The spectroscopic pump-probe reflectance method was used to investigate recombination dynamics in samples of nanocrystalline silicon embedded in a matrix of hydrogenated amorphous silicon. We found that the dynamics can be described by a rate equation including linear and quadratic terms corresponding to recombination processes associated with impurities and impurity-assisted Auger ionization, respectively. We determined the values of the recombination coefficients using the initial concentrations method. We report the coefficients of 1.5 x 10(11) s(-1) and 1.1 x 10(-10) cm(3) s(-1) for the impurity-assisted recombination and Auger ionization, respectively. (C) 2015 Optical Society of America

引用

页码：3889 / 3892

页数：4

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