Strain-induced direct band gap shrinkage in local Ge-on-insulator structures fabricated by lateral liquid-phase epitaxy

被引：20

作者：

Matsue, Masahiro ^{[1
]}

Yasutake, Yuhsuke ^{[2
]}

Fukatsu, Susumu ^{[2
]}

Hosoi, Takuji ^{[1
]}

Shimura, Takayoshi ^{[1
]}

Watanabe, Heiji ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Engn, Suita, Osaka 5650871, Japan

[2] Univ Tokyo, Grad Sch Arts & Sci, Meguro Ku, Tokyo 1538902, Japan

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 03期

关键词：

SI; SUBSTRATE; MOSFETS;

D O I：

10.1063/1.4862890

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Direct band gap shrinkage in Ge-on-insulator (GOI) structures fabricated by lateral liquid-phase epitaxy (LLPE) was investigated by means of micro(mu)-photoluminescence and mu-Raman spectroscopy. The LLPE method, based on the rapid thermal process, was found to be an effective and feasible way to produce highly strained local GOI structures. We observed a significant redshift of direct gap emission amounting to 45meV from the tensile-strained GOI layer. Strain analysis and temperature dependent PL spectra indicated that a direct band gap shrinkage was mainly due to a tensile strain of about 0.4% induced by rapid crystallization from the Ge melting point during the LLPE process. The local optical properties along the LLPE-grown GOI wire were examined and discussed on the basis of mu-PL mapping images. (C) 2014 AIP Publishing LLC.

引用

页数：4

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