Comparison of electrical and reliability characteristics of different 14 Å oxynitride gate dielectrics

被引：0
|
作者：
Pan, TM
Lin, HS
Chen, MG
Liu, CH
Chang, YJ
机构：
[1] United Microelect Corp, Qual & Reliabil Assurance Div, Hsinchu, Taiwan
[2] United Microelect Corp, Technol & Proc Dev Dept Div, Hsinchu, Taiwan
来源：
IEEE ELECTRON DEVICE LETTERS | 2002年 / 23卷 / 07期
关键词：
N2O; N2O-ISSG; oxynitride; RPN; RTNO; ultrathin;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A comparison of RTNO, N2O and N2O-ISSG ultrathin oxynitride gate dielectrics fabricated by combining a remote plasma nitridation (RPN) treatment with equal physical oxide thickness of 14 Angstrom is explored. The N2O-ISSG oxynitride gate dielectric film demonstrates good interface properties, higher mobility and excellent reliability. This film by RPN treatment is thus attractive as the gate dielectric for future ultra-large scale integration (ULSI) devices.
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页码：416 / 418
页数：3
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