New neural models of microwave transistor noise parameters based on bias conditions

被引：0

作者：

Markovic, V ^{[1
]}

Marinkovic, Z ^{[1
]}

Milovanovic, B ^{[1
]}

机构：

[1] Univ Nish, Fac Elect Engn, YU-18000 Nish, Yugoslavia

来源：

2002 23RD INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS | 2002年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The new results of neural modeling of transistor noise parameters are presented in this paper. The previous authors' modeling efforts have yielded neural models of transistor noise parameters dependence on frequency and bias conditions, In order to improve this modeling, especially modeling of parameters with irregular behaviour, the scattering parameters are introduced as neural model inputs.

引用

页码：305 / 308

页数：4

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