Formation of ordered Si nanowires arrays on Si substrate

被引：7

作者：

Evtukh, A. ^{[1
]}

Druzhinin, A. ^{[2
]}

Ostrovskii, I. ^{[2
]}

Kizjak, A. ^{[1
]}

Grigoriev, A. ^{[1
]}

Steblova, O. ^{[3
]}

Nichkalo, S. ^{[2
]}

机构：

[1] V Lashkaryov Inst Semicond Phys, Kiev, Ukraine

[2] Lviv Polytechn Natl Univ, Lvov, Ukraine

[3] Taras Shevchenko Natl Univ Kyiv, Inst High Technol, Kiev, Ukraine

来源：

FUNCTIONAL NANOMATERIALS AND DEVICES VII | 2014年 / 854卷

关键词：

nanowires; silicon; LPCVD method; kinetic coefficients; GROWTH;

D O I：

10.4028/www.scientific.net/AMR.854.83

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The paper deals with investigation of silicon nanowires formation by LP CVD method on Si substrate using gold films as a mask. The average diameter of Si nanowires grown by LP CVD was about 60 nm. It was shown that using of Si-Au droplets as the mask allows to obtain vertically aligned silicon nanowires with average diameter of about 60 nm. The kinetics of radial and axial growth was investigated, the growth rates and kinetic coefficient of growth were calculated, which showed a good accordance to experimental data.

引用

页码：83 / +

页数：3

共 17 条

[11] Dependence of the growth rate of nanowires on the nanowire diameter [J].