Time-domain analysis of lossy active transmission lines using FDTD method

被引：11
|
作者：
Afrooz, Kambiz [1 ]
Abdipour, Abdolah [1 ]
Tavakoli, Ahad [1 ]
Movahhedi, Masoud [2 ]
机构：
[1] Amirkabir Univ Technol, Microwave mm Wave & Wireless Commun Res Lab, Radiocommun Ctr Excellence, Dept Elect Engn, Tehran 15914, Iran
[2] Shahid Bahonar Univ Kerman, Dept Elect Engn, Kerman, Iran
来源：
AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS | 2009年 / 63卷 / 03期
关键词：
Skin depth; Fully distributed model; Microwave transistor; Finite-difference time-domain (FDTD) technique; FINITE-DIFFERENCE; SIMULATION; CIRCUITS; DEVICES;
D O I：
10.1016/j.aeue.2007.12.003
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, an accurate and efficient method for analysis of a GaAs MESFET including frequency-dependent losses of the electrodes in the time domain is presented. The time domain analysis is obtained based on the fully distributed model using finite-difference time-domain (FDTD) technique, with the assumption of the skin effect losses. The time-domain results are verified using the conventional time-domain to frequency-domain (TDFD) solution technique. (C) 2008 Elsevier GmbH. All rights reserved.
引用
收藏
页码：168 / 178
页数：11
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