Time-domain analysis of lossy active transmission lines using FDTD method

被引：11

作者：

Afrooz, Kambiz ^{[1
]}

Abdipour, Abdolah ^{[1
]}

Tavakoli, Ahad ^{[1
]}

Movahhedi, Masoud ^{[2
]}

机构：

[1] Amirkabir Univ Technol, Microwave mm Wave & Wireless Commun Res Lab, Radiocommun Ctr Excellence, Dept Elect Engn, Tehran 15914, Iran

[2] Shahid Bahonar Univ Kerman, Dept Elect Engn, Kerman, Iran

来源：

AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS | 2009年 / 63卷 / 03期

关键词：

Skin depth; Fully distributed model; Microwave transistor; Finite-difference time-domain (FDTD) technique; FINITE-DIFFERENCE; SIMULATION; CIRCUITS; DEVICES;

D O I：

10.1016/j.aeue.2007.12.003

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, an accurate and efficient method for analysis of a GaAs MESFET including frequency-dependent losses of the electrodes in the time domain is presented. The time domain analysis is obtained based on the fully distributed model using finite-difference time-domain (FDTD) technique, with the assumption of the skin effect losses. The time-domain results are verified using the conventional time-domain to frequency-domain (TDFD) solution technique. (C) 2008 Elsevier GmbH. All rights reserved.

引用

页码：168 / 178

页数：11

共 18 条

[1] Complete sliced model of microwave FET's and comparison with lumped model and experimental results [J].