Simulation of point defect distributions in silicon crystals during melt-growth

被引：8

作者：

Nakamura, K ^{[1
]}

Saishoji, T ^{[1
]}

Tomioka, J ^{[1
]}

机构：

[1] Komatsu Elect Met Co Ltd, Tech Div, Crystal Technol Dept, Hiratsuka, Kanagawa 2540014, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 210卷 / 1-3期

关键词：

silicon; point defect; grown-in defect; oxygen precipitation;

D O I：

10.1016/S0022-0248(99)00645-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Simulations of the point defect diffusion during the crystal growth process are reported for the investigation of the relationship between the distribution of the oxygen precipitation and point defect concentration in CZ silicon crystals. Distribution of the oxygen precipitation is strongly affected by the point defect concentrations during the growth process. There have been many proposed models for the point defect diffusion during the crystal growth process, and the correspondence between point defect concentrations and grown-in defects has been extensively investigated. In this paper, we have compared the distribution of the oxygen precipitation and the ratio of super-saturation between vacancies and self-interstitials. The experimental results agreed with the results obtained by calculation. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：49 / 53

页数：5

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