Ultrafast Carrier Dynamics in 2D NbTe2 Films: Implications for Photonic and Optoelectronic Devices?

被引:12
作者
Jia, Linnan [1 ]
Huo, Chang-Fu [2 ,3 ]
Yan, Xiao-Qing [2 ,3 ]
Wu, Jiayang [1 ]
Zhang, Yu-Zhe [2 ]
Yang, Yunyi [4 ]
Xu, Wenxiong [2 ,5 ]
Cui, Qiannan [5 ]
Song, Daohong [2 ,3 ]
Jia, Baohua [1 ,4 ]
Liu, Zhi-Bo [2 ,3 ]
Chen, Zhigang [2 ,3 ]
Moss, David J. [1 ]
机构
[1] Swinburne Univ Technol, Opt Sci Ctr, Hawthorn, Vic 3122, Australia
[2] Nankai Univ, Sch Phys, Minist Educ, Key Lab Weak Light Nonlinear Photon, Tianjin 300071, Peoples R China
[3] Nankai Univ, Teda Appl Phys Inst, Tianjin 300071, Peoples R China
[4] Swinburne Univ Technol, Ctr Translat Atomat, Hawthorn, Vic 3122, Australia
[5] Southeast Univ, Sch Biol Sci & Med Engn, State Key Lab Bioelect, Nanjing 210096, Peoples R China
基金
国家重点研发计划; 中国国家自然科学基金; 澳大利亚研究理事会; 北京市自然科学基金;
关键词
layered transition-metal dichalcogenides; NbTe2; flake; ultrafast carrier dynamics; pump-probe spectroscopy; optical properties; OPTICAL-PROPERTIES; ABSORPTION; GROWTH;
D O I
10.1021/acsanm.2c04333
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
As one of the representatives of emerging metallic transition-metal dichalcogenides, niobium ditelluride (NbTe2) has attracted intensive interest recently due to its distorted lattice structure and unique physical properties. Here, we report on the ultrafast carrier dynamics in NbTe2 measured using time-resolved pump-probe transient reflection spectroscopy. A thickness-dependent carrier relaxation time is observed, exhibiting a clear increase in the fast and slow carrier decay rates for thin NbTe2 flakes. In addition, pump-power-dependent measurements indicate that the carrier relaxation rates are power-independent and the peak amplitude of the transient reflectivity increases linearly with the pump power. The isotropic relaxation dynamics in NbTe2 is also verified by performing polarization-resolved pump-probe measurements. These results provide insight into the light-matter interactions and charge-carrier dynamics in NbTe2 and will pave the way for its applications to photonic and optoelectronic devices.
引用
收藏
页码:17348 / 17355
页数:8
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