Dynamics of T-site muonium states in gallium phosphide

被引：0

作者：

Vernon, J. E. ^{[1
]}

Carroll, B. R. ^{[1
]}

Bani-Salameh, H. N. ^{[1
]}

Lichti, R. L. ^{[1
]}

Celebi, Y. G. ^{[2
]}

Fan, I. ^{[3
]}

Mansour, A. I. ^{[3
]}

Chow, K. H. ^{[3
]}

机构：

[1] Texas Tech Univ, Dept Phys, Lubbock, TX 79409 USA

[2] Istanbul Univ, Dept Phys, TR-34134 Istanbul, Turkey

[3] Univ Alberta, Dept Phys, Edmonton, AB T6G 2G7, Canada

来源：

PHYSICA B-CONDENSED MATTER | 2009年 / 404卷 / 5-7期

基金：

加拿大自然科学与工程研究理事会;

关键词：

Hydrogen; Defect levels; GaP; NEGATIVELY CHARGED MUONIUM; N-TYPE GAAS; SEMICONDUCTORS;

D O I：

10.1016/j.physb.2008.11.163

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We report on the motional dynamics of Mu(-) and the ionization processes related to the Mu(T) acceptor state in n-type gallium phosphide. Muon spin resonance results on semi-insulating GaP suggest the presence of both Mu(+) and Mu(-) diamagnetic states above similar to 400 K. From the growth step in the RF amplitudes, we obtain an energy of similar to 0.82 eV for the Mu(T) acceptor-related hole ionization. The loss of the Mu- RF-component above 600 K yields an energy of similar to 1.7eV, which is assigned to thermal promotion of an electron from Mu- to the conduction band. These two results locate the Mu(T) acceptor level with respect to the valence and conduction band edges, respectively. Low-field spin precession and zero-field depolarization data on n-type GaP show a peak in diamagnetic fraction below 300 K, and a roughly linear increase in amplitude at higher temperatures. (c) 2008 Elsevier B.V. All rights reserved.

引用

页码：820 / 823

页数：4

共 7 条

[1] Diffusion and charge dynamics of negatively charged muonium in n-type GaAs [J].