On thermally stimulated currents under dispersive transport regime

被引：8
作者：
Tomaszewicz, W [1 ]
Rybicki, J [1 ]
Grygiel, P [1 ]
机构：
[1] GDANSK TECH UNIV,DEPT TECH PHYS & APPL MATH,PL-80952 GDANSK,POLAND
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 1997年 / 221卷 / 01期
关键词：
D O I：
10.1016/S0022-3093(97)00341-4
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The formulas describing thermally stimulated currents (TSCs) due to dispersive carrier transport for monomolecular and bimolecular recombination are given. Contrary to a paper by Arkhipov and Adriaenssens (AA, strong carrier retrapping is assumed. The expressions for currents obtained in the high-temperature limit are the same as derived by AA, whereas the low-temperature expressions differ, The analytical results are verified by the Monte Carlo simulation of TSCs for exponential trap distribution. (C) 1997 Elsevier Science B.V.
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页码：84 / 88
页数：5
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