Investigation of new slection citeria for an otimized imersion pocess

被引:7
作者
Ercken, M. [1 ]
Gronheid, R. [1 ]
Foubert, P. [1 ]
Stepanenko, N. [1 ]
Vandeweyer, T. [1 ]
Pollentier, I. [1 ]
Kim, H. W. [1 ]
Kishimura, S. [1 ]
Tenaglia, E. [1 ]
Delvaux, C. [1 ]
Vandenbroeck, N. [1 ]
Moelants, M. [1 ]
Baerts, C. [1 ]
机构
[1] IMEC, B-3001 Louvain, Belgium
关键词
leaching; water uptake; intermixing layer; intrafield soak-related fingerprint; defectivity;
D O I
10.2494/photopolymer.19.539
中图分类号
O63 [高分子化学(高聚物)];
学科分类号
070305 ; 080501 ; 081704 ;
摘要
Since the introduction of immersion lithography, leaching has become an important topic in screening new resist materials. It is considered as a possible source for lens contamination, but also it is expected to introduce new defect mechanisms. Protective topcoats have proven their use as leaching barriers, but care is needed when introducing them. They can have an impact on CD control and the defect behaviour of the immersion process. In this paper, a method is proposed to characterize leaching. It has been applied to investigate several cases. Next to that, water uptake and the formation of an intermixing layer in between resist and topcoat have been investigated with respect to their contribution to CD variations and defectivity.
引用
收藏
页码:539 / 546
页数:8
相关论文
共 14 条
[1]   Non-destructive characterisation of porous low-k dielectric films [J].
Baklanov, MR ;
Mogilnikov, KP .
MICROELECTRONIC ENGINEERING, 2002, 64 (1-4) :335-349
[2]   Leaching phenomena and their suppresion in 193 nm immersion lithography [J].
Dammel, RR ;
Pawlowski, G ;
Romano, A ;
Houlihan, FM ;
Kim, WK ;
Sakamuri, R ;
Abdallah, D ;
Padmanaban, M ;
Rahman, MD ;
McKenzie, D .
JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY, 2005, 18 (05) :593-602
[3]   193 nm immersion lithography - Taking the plunge [J].
Dammel, RR ;
Houlihan, FM ;
Sakamuri, R ;
Rentkiewicz, D ;
Romano, A .
JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY, 2004, 17 (04) :587-601
[4]  
GRONHEID R, 2006, IN PRESS P SPIE, V6154
[5]   Liquid immersion lithography - Evaluation of resist issues [J].
Hinsberg, W ;
Wallraff, G ;
Larson, C ;
Davis, B ;
Deline, V ;
Raoux, S ;
Miller, D ;
Houle, F ;
Hoffnagle, J ;
Sanchez, M ;
Rettner, C ;
Sundberg, L ;
Medeiros, D ;
Dammel, R ;
Conley, W .
ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XXI, PTS 1 AND 2, 2004, 5376 :21-33
[6]   Study and control of the interfacial mass transfer of resist components in 193nm immersion lithography [J].
Kanna, S ;
Inabe, H ;
Yamamoto, K ;
Tarutani, S ;
Kanda, H ;
Mizutani, K ;
Kitada, K ;
Uno, S ;
Kawabe, Y .
Advances in Resist Technology and Processing XXII, Pt 1 and 2, 2005, 5753 :40-51
[7]  
KISHIMURA S, 2005, P SOC PHOTO-OPT INS, V5752, P20
[8]  
NAKAGAWA H, 2006, IN PRESS P SPIE, V6153
[9]  
OWA S, 2005, 2 INT S IMM LITH BRU
[10]  
PADMANABAN M, 2006, IN PRESS P SPIE, V6153