Digital Baseband Predistortion Based Linearized Broadband Inverse Class-E Power Amplifier

被引:7
作者
Thian, Mury [1 ]
Xiao, Ming [1 ]
Gardner, Peter [1 ]
机构
[1] Univ Birmingham, Dept Elect Elect & Comp Engn, Birmingham B15 2TT, W Midlands, England
基金
英国工程与自然科学研究理事会;
关键词
Class E; injection; linearization; lookup table (LUT); memory effects; power amplifier (PA); predistortion; PHASE CHARACTERIZATION; RF; MODEL;
D O I
10.1109/TMTT.2008.2011164
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A newly introduced inverse class-E power amplifier (PA) was designed, simulated, fabricated, and characterized. The PA operated at 2.26 GHz and delivered 20.4-dBm output power with peak drain efficiency (DE) of 65% and power gain of 12 dB. Broadband performance was achieved across a 300-Mitz bandwidth with DE of better than 50% and 1-dB output-power flatness. The concept of enhanced injection predistortion with a capability to selectively suppress unwanted sub-frequency components and hence suitable for memory effects minimization is described coupled with a new technique that facilitates an accurate measurement of the phase of the third-order intermodulation (IM3) products. A robust iterative computational algorithm proposed in this paper dispenses with the need for manual tuning of amplitude and phase of the IM3 injected signals as commonly employed in the previous publications. The constructed inverse class-E PA was subjected to a nonconstant envelope 16 quadrature amplitude modulation signal and was linearized using combined lookup table (LUT) and enhanced injection technique from which superior properties from each technique can be simultaneously adopted. The proposed method resulted in 0.7% measured error vector magnitude (in rms) and 34-dB adjacent channel leakage power ratio improvement, which was 10 dB better than that achieved using the LUT predistortion alone.
引用
收藏
页码:323 / 328
页数:6
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