Edge Dislocations Triggered Surface Instability in Tensile Epitaxial Hexagonal Nitride Semiconductor

被引：9

作者：

Cheng, Jianpeng ^{[1
]}

Yang, Xuelin ^{[1
]}

Zhang, Jie ^{[1
]}

Hu, Anqi ^{[1
]}

Ji, Panfeng ^{[1
]}

Feng, Yuxia ^{[1
]}

Guo, Lei ^{[1
]}

He, Chenguang ^{[1
]}

Zhang, Lisheng ^{[1
]}

Xu, Fujun ^{[1
]}

Tang, Ning ^{[1
]}

Wang, Xinqiang ^{[1
,2
]}

Shen, Bo ^{[1
,2
]}

机构：

[1] Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China

[2] Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China

来源：

ACS APPLIED MATERIALS & INTERFACES | 2016年 / 8卷 / 49期

基金：

中国国家自然科学基金;

关键词：

surface instability; nanoscale fissures; edge dislocations; hexagonal nitrides; TEM; ELECTRON-MOBILITY TRANSISTORS; MOLECULAR-BEAM EPITAXY; LIGHT-EMITTING-DIODES; LOW-TEMPERATURE; ALGAN/GAN HETEROSTRUCTURES; NANOWIRE HETEROSTRUCTURES; THERMAL MANAGEMENT; GALLIUM NITRIDE; GAN; GROWTH;

D O I：

10.1021/acsami.6b11124

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Understanding the semiconductor surface and its properties including surface stability, atomic morphologies, and even electronic states is of great importance not only for understanding surface growth kinetics but also for evaluating the degree to which they affect the devices' performance. Here, we report studies on the nanoscale fissures related surface instability in AlGaN/GaN heterostructures. Experimental results reveal that edge dislocations are actually the root cause of the surface instability. The nanoscale fissures are initially triggered by the edge dislocations, and the subsequent evolution is associated with tensile lattice-mismatch stress and hydrogen etching. Our findings resolve a long-standing problem on the surface instability in AlGaN/GaN heterostructures and will also lead to new understandings of surface growth kinetics in other hexagonal semiconductor systems.

引用

页码：34108 / 34114

页数：7

共 40 条

[21] Tensile strain-induced formation of micro-cracks for AlGaN/GaN heterostructures [J].