Statistical Compact Modeling of Low Frequency Noise in Buried-Channel, Native, and Standard MOSFETs

被引:0
作者
Mavredakis, Nikolaos [1 ]
Bucher, Matthias [1 ]
Habas, Predrag [2 ]
Acovic, Alexandre [2 ]
Meyer, Rene [2 ]
机构
[1] Tech Univ Crete, Sch ECE, Khania 73100, Greece
[2] EM Microelect Marin SA, CH-2074 Marin Epagnier, Switzerland
来源
2017 INTERNATIONAL CONFERENCE ON NOISE AND FLUCTUATIONS (ICNF) | 2017年
关键词
buried channel; compact model; low frequency noise; MOSFET; native; variability; 1/F NOISE;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, Buried-Channel and Native MOSFETs are thoroughly investigated in terms of Low Frequency Noise (LFN) variability for different bias and area conditions. These devices are compared with standard bulk CMOS transistors indicating lower levels of LFN regarding both its mean value and its variability. Moreover a recently proposed compact MOSFET model for LFN and its variability, is validated with excellent results. More specifically, it covers the increase of noise deviation in weak inversion and generally its strong bias-dependence in larger devices while it also gives consistent results regarding the scaling of LFN variability.
引用
收藏
页数:4
相关论文
共 21 条
  • [1] A Physics-Based Statistical RTN Model for the Low Frequency Noise in MOSFETs
    da Silva, Mauricio Banaszeski
    Tuinhout, Hans P.
    Zegers-van Duijnhoven, Adrie
    Wirth, Gilson I.
    Scholten, Andries J.
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016, 63 (09) : 3683 - 3692
  • [2] Gate voltage dependence of MOSFET 1/f noise statistics
    Ertuerk, Mete
    Xia, Tian
    Clark, William F.
    [J]. IEEE ELECTRON DEVICE LETTERS, 2007, 28 (09) : 812 - 814
  • [3] Electrical noise and RTS fluctuations in advanced CMOS devices
    Ghibaudo, G
    Boutchacha, T
    [J]. MICROELECTRONICS RELIABILITY, 2002, 42 (4-5) : 573 - 582
  • [4] 1-F NOISE
    HOOGE, FN
    [J]. PHYSICA B & C, 1976, 83 (01): : 14 - 23
  • [5] A UNIFIED MODEL FOR THE FLICKER NOISE IN METAL OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
    HUNG, KK
    KO, PK
    HU, CM
    CHENG, YC
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (03) : 654 - 665
  • [6] Ioannidis E. G., 2011, IEDM, P1861
  • [7] PARAMETER EXTRACTION AND 1/F NOISE IN A SURFACE AND A BULK-TYPE, P-CHANNEL LDD MOSFET
    LI, XS
    BARROS, C
    VANDAMME, EP
    VANDAMME, LKJ
    [J]. SOLID-STATE ELECTRONICS, 1994, 37 (11) : 1853 - 1862
  • [8] Mavredakis N., 2010, 5 EUR C CIRC SYST CO, P86
  • [9] Mavredakis N., 2015, INT C NOIS FLUCT ICN, P1
  • [10] Mavredakis N, 2016, PROC EUR S-STATE DEV, P464, DOI 10.1109/ESSDERC.2016.7599686