2.7-μm GaSb-Based Diode Lasers With Quinary Waveguide

被引：9

作者：

Chen, J. ^{[1
]}

Kipshidze, G. ^{[1
]}

Shterengas, L. ^{[1
]}

Hosoda, T. ^{[1
]}

Wang, Y. ^{[1
]}

Donetsky, D. ^{[1
]}

Belenky, G. ^{[1
]}

机构：

[1] SUNY Stony Brook, Stony Brook, NY 11794 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2009年 / 21卷 / 16期

基金：

美国国家科学基金会;

关键词：

Laser; power laser; semiconductor laser; MU-M; POWER; OPERATION;

D O I：

10.1109/LPT.2009.2023224

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Type-I double-quantum-well (QW) GaSb-based diode lasers operating at 2.7 mu m with room-temperature continuous-wave (CW) output power of 600 mW and peak power-conversion efficiency of 10% were designed and fabricated. The devices employed 470-nm-wide AlGaInAsSb waveguide optimized for improved device differential gain. CW threshold current density about 100 A/cm(2) per QW and slope efficiency of 150 mW/A were demonstrated at 16 degrees C.

引用

收藏

页码：1112 / 1114

页数：3

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