Dual Band Power Amplifier for Handset Application

被引：0
|
作者：
Jin, Jie [1 ]
Zhang, Xuguang [2 ]
Jiang, Xiaoxiao [1 ]
Fang, Yiyuan [1 ]
机构：
[1] Shanghai Univ Engn Sci, Shanghai 201620, Peoples R China
[2] RDA Microelect Corp, Shanghai 201203, Peoples R China
来源：
PROCEEDINGS OF 2015 IEEE 11TH INTERNATIONAL CONFERENCE ON ASIC (ASICON) | 2015年
基金：
中国国家自然科学基金;
关键词：
InGaP/GaAs HBT; wideband; power amplifier; ACPR;
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
The paper makes use of the wideband design technique and linear bias circuit to design a dual band power amplifier(PA) for TD- SCDMA. The PA is taped out in the 2um InGaP/ GaAs HBT process and verified in the evaluation board by the QPSK modulated stimulus with a chip rate of 1.28Mcps in 2.0 GHz. The measured result shows that the power gain, linear output power and power added efficiency are respectively 27dB, 28dBm and 39% with the adjacent channel power ratio of -33.08dBc in offset +/- 1.6MHz.
引用
收藏
页数：4
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