Dry etching of SiC in inductively coupled Cl2/Ar plasma

被引:47
作者
Jiang, LD
Plank, NOV
Blauw, MA
Cheung, R
van der Drift, E
机构
[1] Univ Edinburgh, Scottish Microelect Ctr, Sch Engn & Elect, Edinburgh EH9 3JF, Midlothian, Scotland
[2] Delft Univ Technol, Delft Inst Microelect & Submicron Technol, NL-2600 GB Delft, Netherlands
关键词
D O I
10.1088/0022-3727/37/13/012
中图分类号
O59 [应用物理学];
学科分类号
摘要
Inductively coupled Cl-2/Ar plasma etching of 4H-SiC has been studied. The SiC etch rate has been investigated as a function of average ion energy, Ar concentration in the gas mixtures, inductively coupled plasma power, work pressure and substrate temperature. The etch mechanism has been investigated by correlating the ion current density and relative atomic chlorine content to the etch rate under various etch conditions. For the first time, it has been found that the etch rate of SiC increases by about 50% at lower substrate temperatures (-80degreesC) than at high substrate temperatures (150degreesC) with the highest SiC etch rate of 230 nm min(-1) being achieved at a substrate temperature of -80degreesC.
引用
收藏
页码:1809 / 1814
页数:6
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