Dry etching of SiC in inductively coupled Cl2/Ar plasma

Inductively coupled Cl-2/Ar plasma etching of 4H-SiC has been studied. The SiC etch rate has been investigated as a function of average ion energy, Ar concentration in the gas mixtures, inductively coupled plasma power, work pressure and substrate temperature. The etch mechanism has been investigated by correlating the ion current density and relative atomic chlorine content to the etch rate under various etch conditions. For the first time, it has been found that the etch rate of SiC increases by about 50% at lower substrate temperatures (-80degreesC) than at high substrate temperatures (150degreesC) with the highest SiC etch rate of 230 nm min(-1) being achieved at a substrate temperature of -80degreesC.