Band structure of III-V ternary semiconductor alloys beyond the VCA

被引：56

作者：

Bechiri, A

Benmakhlouf, F

Bouarissa, N ^{[1
]}

机构：

[1] Univ Msila, Dept Phys, Msila 28000, Algeria

[2] Univ Tebessa, Dept Phys, Tebessa 12002, Algeria

来源：

MATERIALS CHEMISTRY AND PHYSICS | 2003年 / 77卷 / 02期

关键词：

zincblende; virtual crystal approximation; empirical pseudopotential method;

D O I：

10.1016/S0254-0584(02)00124-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The band structures of some zincblende III-V semiconductor alloys are calculated beyond the virtual crystal approximation (VCA) using the empirical pseudopotential method (EPM). Our results show that the calculated optical bandgap bowing parameter agree with the experiment only when going beyond the VCA. We also found that the direct bandgap (Gamma --> Gamma) bowing factor becomes generally larger on going from alloys with small lattice mismatches to those with larger ones. (C) 2002 Elsevier Science B.V. All rights reserved.

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页码：507 / 510

页数：4

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