Adhesion studies of CVD copper metallization

被引：38

作者：

Gandikota, S ^{[1
]}

Voss, S ^{[1
]}

Tao, R ^{[1
]}

Duboust, A ^{[1
]}

Cong, D ^{[1
]}

Chen, LY ^{[1
]}

Ramaswami, S ^{[1
]}

Carl, D ^{[1
]}

机构：

[1] Appl Mat Inc, Santa Clara, CA 95054 USA

来源：

MICROELECTRONIC ENGINEERING | 2000年 / 50卷 / 1-4期

关键词：

chemical vapor deposition; Cu thin films; barriers; annealing; physical vapor deposition;

D O I：

10.1016/S0167-9317(99)00326-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The adhesion of chemical vapor deposition (CVD) Cu thin films to various barriers was observed to improve with a post-deposition anneal or a physical vapor deposition (PVD) Cu flash layer on the barrier before depositing CVD Cu. The ambient exposure of the barrier before the deposition of CVD Cu has been observed to lead to degradation of adhesion in both CVD Cu seed and CVD/PVD Cu high vacuum integrated metallization schemes. The integrated CVD and PVD Cu deposition scheme exhibits better adhesion due to the inherent annealing provided during the PVD deposition which is carried out at temperatures between 300 and 400 degrees C. We have evaluated both qualitative and quantitative tests - tape test, Stud pull test and 4-point bend test - in understanding adhesion and observed that each of these tests give different details of interface breakdown. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：547 / 553

页数：7

共 8 条

[1] THIN-FILM ADHESION [J].