A 80GHz Voltage Controlled Oscillator Utilizing a Negative Varactor in 90nm CMOS Technology

被引：7

作者：

Chaivipas, Win ^{[1
]}

Okada, Kenichi ^{[1
]}

Matsuzawa, Akira ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan

来源：

2008 IEEE ASIAN SOLID-STATE CIRCUITS CONFERENCE | 2008年

关键词：

D O I：

10.1109/ASSCC.2008.4708747

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 80GHz voltage controlled oscillator is presented. It is shown that impedance transformation enables the transformation of a varactor capacitance into negative varactor partially canceling the capacitance of the differential pair. This enables the transmission line resonator to be longer and have a higher impedance. Design criterion for achieving negative varactor is also presented, and design issues of millimeter wave voltage controlled oscillators are discussed. The voltage controlled oscillator is fabricated in 90nm CMOS technology and achieves a phase noise of -109dBc/Hz at 10MHz offset with 13mW power consumption from a 1.2V power supply.

引用

页码：133 / 136

页数：4

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