Effects of Graphene Oxide Layer on Resistive Memory Properties of Cu/GNO/SiO2/Pt Structure

被引：5
|
作者：
Liu, Chih-Yi [1 ,4 ]
Zhang, Yu-Xuan [1 ,4 ]
Yang, Chih-Peng [1 ,4 ]
Lai, Chun-Hung [2 ]
Weng, Min-Hang [3 ]
Ye, Chang-Sin [3 ]
Huang, Chun-Kai [3 ]
机构：
[1] Natl Kaohsiung Univ Appl Sci, Dept Elect Engn, 415 Jiangong Rd, Kaohsiung 80778, Taiwan
[2] Natl United Univ, Dept Elect Engn, 2 Lienda, Miaoli 36063, Taiwan
[3] Metal Ind Res & Dev Ctr, 1001 Kaonan Highway, Kaohsiung 81160, Taiwan
[4] Natl Kaohsiung Univ Sci & Technol, Kaohsiung, Taiwan
来源：
SENSORS AND MATERIALS | 2018年 / 30卷 / 03期
关键词：
silicon dioxide; graphene oxide; resistive memory; SENSOR; TEMPERATURE; FILMS;
D O I：
10.18494/SAM.2018.1752
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
A Cu/graphene oxide (GO)/SiO2/Pt structure was synthesized in order to investigate the effects of the GO layer on the properties of resistive memory. The resistance of the Cu/GO/SiO2/Pt structure can be reversibly switched between a high-resistance state and a low-resistance state by dc voltages with different polarities. Such resistance switching is dominated by the electrochemical reaction with Cu conducting filaments. The folded and layered structure of the GO film was found to limit the number of available pathways for Cu ion migration, resulting in the formation of fewer Cu conducting filaments in the SiO2 layer. Hence, the GO layer improved the stability of resistance switching. The synthesized Cu/GO/SiO2/Pt structure demonstrated low operating voltages, a low operating power, a high resistance ratio, and good reliability, which makes it suitable for use as a next-generation nonvolatile memory structure.
引用
收藏
页码：463 / 469
页数：7
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