Effects of Graphene Oxide Layer on Resistive Memory Properties of Cu/GNO/SiO2/Pt Structure

被引：5
|
作者：
Liu, Chih-Yi [1 ,4 ]
Zhang, Yu-Xuan [1 ,4 ]
Yang, Chih-Peng [1 ,4 ]
Lai, Chun-Hung [2 ]
Weng, Min-Hang [3 ]
Ye, Chang-Sin [3 ]
Huang, Chun-Kai [3 ]
机构：
[1] Natl Kaohsiung Univ Appl Sci, Dept Elect Engn, 415 Jiangong Rd, Kaohsiung 80778, Taiwan
[2] Natl United Univ, Dept Elect Engn, 2 Lienda, Miaoli 36063, Taiwan
[3] Metal Ind Res & Dev Ctr, 1001 Kaonan Highway, Kaohsiung 81160, Taiwan
[4] Natl Kaohsiung Univ Sci & Technol, Kaohsiung, Taiwan
来源：
SENSORS AND MATERIALS | 2018年 / 30卷 / 03期
关键词：
silicon dioxide; graphene oxide; resistive memory; SENSOR; TEMPERATURE; FILMS;
D O I：
10.18494/SAM.2018.1752
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
A Cu/graphene oxide (GO)/SiO2/Pt structure was synthesized in order to investigate the effects of the GO layer on the properties of resistive memory. The resistance of the Cu/GO/SiO2/Pt structure can be reversibly switched between a high-resistance state and a low-resistance state by dc voltages with different polarities. Such resistance switching is dominated by the electrochemical reaction with Cu conducting filaments. The folded and layered structure of the GO film was found to limit the number of available pathways for Cu ion migration, resulting in the formation of fewer Cu conducting filaments in the SiO2 layer. Hence, the GO layer improved the stability of resistance switching. The synthesized Cu/GO/SiO2/Pt structure demonstrated low operating voltages, a low operating power, a high resistance ratio, and good reliability, which makes it suitable for use as a next-generation nonvolatile memory structure.
引用
收藏
页码：463 / 469
页数：7
相关论文
共 50 条
  • [1] Resistive Switching Characteristics of Cu/SiO2/Pt Structure
    Liu, Chih-Yi
    Sung, Po-Wei
    Lai, Chun-Hung
    Wang, Hung-Yu
    FUNCTIONAL AND ELECTRONIC MATERIALS, 2011, 687 : 167 - +
  • [2] Insertion of a Graphene Oxide Layer into a Cu/SiO2/Pt Structure to Overcome Performance Degradation in a Vaporless Environment
    Liu, Chih-Yi
    Lai, Chun-Hung
    Lin, Chao-Cheng
    Yang, Chih-Peng
    APPLIED SCIENCES-BASEL, 2019, 9 (07):
  • [3] Different Resistive Switching Characteristics of a Cu/SiO2/Pt Structure
    Liu, Chih-Yi
    Sung, Po-Wei
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (09)
  • [4] Influence of SiO2 Layer on Resistive Switching Properties of SiO2/CuxO Stack Structure
    Liu, Chih-Yi
    Li, Yu-Chen
    Lai, Chun-Hung
    Liu, Shih-Kun
    FUNCTIONAL AND ELECTRONIC MATERIALS, 2011, 687 : 106 - +
  • [5] Improvement of switching uniformity in Cu/SiO2/Pt resistive memory achieved by voltage prestress
    Liu, Chih-Yi
    Lin, Chao-Han
    Liu, Shin-Hung
    Bai, Chang-Zong
    Zhang, Yu-Xuan
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2015, 54 (03)
  • [6] Improvement of switching uniformity in Cu/SiO2/Pt resistive memory achieved by voltage prestress
    Liu, Chih-Yi
    Lin, Chao-Han
    Liu, Shin-Hung
    Bai, Chang-Zong
    Zhang, Yu-Xuan
    Japanese Journal of Applied Physics, 2015, 54 (03):
  • [7] Multilevel resistive switching in Ag/SiO2/Pt resistive switching memory device
    Liu, Lifeng
    Yu, Di
    Ma, Wenjia
    Chen, Bing
    Zhang, Feifei
    Gao, Bin
    Kang, Jinfeng
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2015, 54 (02)
  • [8] Influence of embedding Cu nano-particles into a Cu/SiO2/Pt structure on its resistive switching
    Liu, Chih-Yi
    Huang, Jyun-Jie
    Lai, Chun-Hung
    Lin, Chao-Han
    NANOSCALE RESEARCH LETTERS, 2013, 8 : 1 - 6
  • [9] Influence of embedding Cu nano-particles into a Cu/SiO2/Pt structure on its resistive switching
    Chih-Yi Liu
    Jyun-Jie Huang
    Chun-Hung Lai
    Chao-Han Lin
    Nanoscale Research Letters, 8
  • [10] Relaxation Properties of Single Layer Graphene on SiO2 Substrate
    Wang, Weidong
    Li, Shuai
    Min, Jiaojiao
    Shen, Cuili
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2015, 15 (04) : 2970 - 2975
12345