Evaluation of the microstructure, thermal and mechanical properties of Cu/SiC nanocomposites fabricated by mechanical alloying

被引:54
作者
Moustafa, Essam B. [1 ]
Taha, Mohammed A. [2 ]
机构
[1] King Abdulaziz Univ, Fac Engn, Mech Engn Dept, Jeddah 21589, Saudi Arabia
[2] Natl Res Ctr, Solid State Phys Dept, El Buhouth St, Giza 12622, Egypt
关键词
copper matrix nanocomposites; silicon carbide; coefficient of thermal expansion; elastic moduli; electrical conductivity; mechanical alloying; IN-VITRO BIOACTIVITY; SINTERING TEMPERATURE; ELECTRICAL-PROPERTIES; CARBONATED-HYDROXYAPATITE; EXPANSION BEHAVIOR; PARTICLE-SIZE; COMPOSITES; DIOXIDE; SITU;
D O I
10.1007/s12613-020-2176-z
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Nano-sized silicon carbide (SiC: 0wt%, 1wt%, 2wt%, 4wt%, and 8wt%) reinforced copper (Cu) matrix nanocomposites were manufactured, pressed, and sintered at 775 and 875 degrees C in an argon atmosphere. X-ray diffraction (XRD) and scanning electron microscopy were performed to characterize the microstructural evolution. The density, thermal expansion, mechanical, and electrical properties were studied. XRD analyses showed that with increasing SiC content, the microstrain and dislocation density increased, while the crystal size decreased. The coefficient of thermal expansion (CTE) of the nanocomposites was less than that of the Cu matrix. The improvement in the CTE with increasing sintering temperature may be because of densification of the microstructure. Moreover, the mechanical properties of these nanocomposites showed noticeable enhancements with the addition of SiC and sintering temperatures, where the microhardness and apparent strengthening efficiency of nanocomposites containing 8wt% SiC and sintered at 875 degrees C were 958.7 MPa and 1.07 vol%(-1), respectively. The electrical conductivity of the sample slightly decreased with additional SiC and increased with sintering temperature. The prepared Cu/SiC nanocomposites possessed good electrical conductivity, high thermal stability, and excellent mechanical properties.
引用
收藏
页码:475 / 486
页数:12
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