Oxygen vacancy redistribution in PbZrxTi1-xO3 (PZT) under the influence of an electric field

被引：32

作者：

Holzlechner, G. ^{[1
]}

Kastner, D. ^{[1
]}

Slouka, C. ^{[1
]}

Flutter, H. ^{[1
]}

Fleig, J. ^{[1
]}

机构：

[1] Vienna Univ Technol, Inst Chem Technol & Analyt, Christian Doppler Lab Ferro Mat, A-1040 Vienna, Austria

来源：

SOLID STATE IONICS | 2014年 / 262卷

关键词：

Oxygen tracer diffusion; ToF-SIMS; Oxygen vacancy diffusion; Field-driven stoichiometry polarization; Resistance degradation; PZT; RESISTANCE DEGRADATION; FATIGUE; TRANSPORT; STACKS;

D O I：

10.1016/j.ssi.2013.08.027

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Oxygen isotope exchange experiments are performed in donor doped PbZrxTi1-xO3 (PZT) under field load. A detailed mapping of the oxygen tracer ions and thus indirectly of the oxygen vacancy distribution is enabled by spatially resolved time-of-flight secondary ion mass spectrometry (ToF-SIMS). Hence, knowledge can be gained on the oxygen vacancy redistribution under the influence of high electric fields applied to Cu inner electrodes of a PZT multilayer stack. Upon field load an enhanced oxygen tracer concentration is measured near to the cathode and interpreted in terms of a field-driven oxygen vacancy accumulation at an oxide ion blocking Cu cathode. Oxygen tracer depth profiles in near-anode and near-cathode diffusion zones give quantitative information on local grain and grain boundary diffusion coefficients and their dependence on applied voltages. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：625 / 629

页数：5

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