Oxygen vacancy redistribution in PbZrxTi1-xO3 (PZT) under the influence of an electric field

被引:32
作者
Holzlechner, G. [1 ]
Kastner, D. [1 ]
Slouka, C. [1 ]
Flutter, H. [1 ]
Fleig, J. [1 ]
机构
[1] Vienna Univ Technol, Inst Chem Technol & Analyt, Christian Doppler Lab Ferro Mat, A-1040 Vienna, Austria
关键词
Oxygen tracer diffusion; ToF-SIMS; Oxygen vacancy diffusion; Field-driven stoichiometry polarization; Resistance degradation; PZT; RESISTANCE DEGRADATION; FATIGUE; TRANSPORT; STACKS;
D O I
10.1016/j.ssi.2013.08.027
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Oxygen isotope exchange experiments are performed in donor doped PbZrxTi1-xO3 (PZT) under field load. A detailed mapping of the oxygen tracer ions and thus indirectly of the oxygen vacancy distribution is enabled by spatially resolved time-of-flight secondary ion mass spectrometry (ToF-SIMS). Hence, knowledge can be gained on the oxygen vacancy redistribution under the influence of high electric fields applied to Cu inner electrodes of a PZT multilayer stack. Upon field load an enhanced oxygen tracer concentration is measured near to the cathode and interpreted in terms of a field-driven oxygen vacancy accumulation at an oxide ion blocking Cu cathode. Oxygen tracer depth profiles in near-anode and near-cathode diffusion zones give quantitative information on local grain and grain boundary diffusion coefficients and their dependence on applied voltages. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码:625 / 629
页数:5
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