Monitoring the self-heating in a high frequency GaNHFET

被引：1

作者：

McAlister, S. P. ^{[1
]}

Bardwell, J. A. ^{[1
]}

Haffouz, S. ^{[1
]}

Tang, H. ^{[1
]}

机构：

[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

来源：

SOLID-STATE ELECTRONICS | 2006年 / 50卷 / 06期

关键词：

self-heating; GaNHFETs; device temperature;

D O I：

10.1016/j.sse.2006.04.017

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The self-heating has been measured and simulated for GaN field effect transistors. For a high frequency test device, which is really two devices in parallel, experiments are described where one side of the device has been heated and the other side used to monitor the self-heating and heat-flow from the side of the device where the self-heating is severe. Crown Copyright (c) 2006 Published by Elsevier Ltd. All rights reserved.

引用

页码：1046 / 1050

页数：5

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