Interaction of Gd and N incorporation on the band structure and oxygen vacancies of HfO2 gate dielectric films

被引：6

作者：

Xiong, Yuhua ^{[1
]}

Tu, Hailing ^{[1
]}

Du, Jun ^{[1
]}

Wang, Ligen ^{[2
,3
]}

Wei, Feng ^{[1
]}

Chen, Xiaoqiang ^{[1
]}

Yang, Mengmeng ^{[1
]}

Zhao, Hongbin ^{[1
]}

Chen, Dapeng ^{[4
]}

Wang, Wenwu ^{[4
]}

机构：

[1] Gen Res Inst Nonferrous Met, Adv Elect Mat Inst, Beijing 100088, Peoples R China

[2] Gen Res Inst Nonferrous Met, Ctr Comp & Simulat Adv Mat, Beijing 100088, Peoples R China

[3] Gen Res Inst Nonferrous Met, State Key Lab Nonferrous Met & Proc, Beijing 100088, Peoples R China

[4] Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2014年 / 251卷 / 08期

基金：

中国国家自然科学基金;

关键词：

dielectrics; electrical properties; oxygen vacancies; thin films; ENERGY-LOSS SPECTROSCOPY; ELECTRONIC-STRUCTURE; ELECTRICAL-PROPERTIES; SILICATE FILMS; OXIDES; NITROGEN; VALENCE; CONSTANTS; ALIGNMENT; OFFSETS;

D O I：

10.1002/pssb.201451303

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The interaction of Gd and N incorporation on the band gap, band offset, and oxygen vacancies of HfO2 high-k gate dielectric films has been investigated. The results show that introducing N (9.7% and 17.4%) and Gd into HfO2 does not dramatically reduce the band gap due to the counteracting effect of Gd doping. Most importantly, Gd and N co-doping increases the conduction band offset of HfO2 and leads to a much better band offset symmetry compared to undoped or Gd-monodoped HfO2. Compared with Gd, N plays a more significant role in improving the band-offset symmetry. The oxygen vacancies are greatly suppressed by Gd and N co-doping under the suitable doping amounts. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1635 / 1638

页数：4

共 50 条

[1] Influence of oxygen vacancies on the electronic structure of HfO2 films
Cho, Deok-Yong
Lee, Jae-Min
Oh, S. -J.
Jang, Hoyoung
Kim, J. -Y.
Park, J. -H.
Tanaka, A.
PHYSICAL REVIEW B, 2007, 76 (16)
[2] Band structure and electrical properties of Gd-doped HfO2 high k gate dielectric
Xiong, Yuhua
Tu, Hailing
Du, Jun
Ji, Mei
Zhang, Xinqiang
Wang, Lei
APPLIED PHYSICS LETTERS, 2010, 97 (01)
[3] Measurement of oxygen diffusion in nanometer scale HfO2 gate dielectric films
Zafar, Sufi
Jagannathan, Hemanth
Edge, Lisa F.
Gupta, Devendra
APPLIED PHYSICS LETTERS, 2011, 98 (15)
[4] Effect of nitrogen incorporation on the electronic structure and thermal stability of HfO2 gate dielectric
Wang, S. J.
Chai, J. W.
Dong, Y. F.
Feng, Y. P.
Sutanto, N.
Pan, J. S.
Huan, A. C. H.
APPLIED PHYSICS LETTERS, 2006, 88 (19)
[5] The interaction of oxygen vacancies with grain boundaries in monoclinic HfO2
McKenna, Keith
Shluger, Alexander
APPLIED PHYSICS LETTERS, 2009, 95 (22)
[6] Importance of controlling oxygen incorporation into HfO2/Si/n-GaAs gate stacks
Zhang, M. H.
Oye, M.
Cobb, B.
Zhu, F.
Kim, H. S.
Ok, I. J.
Hurst, J.
Lewis, S.
Holmes, A.
Lee, J. C.
Koveshnikov, S.
Tsai, W.
Yakimov, M.
Torkanov, V.
Oktyabrsky, S.
JOURNAL OF APPLIED PHYSICS, 2007, 101 (03)
[7] In Situ Analysis of Oxygen Vacancies and Band Alignment in HfO2/TiN Structure for CMOS Applications
Da-Peng Xu
Lin-Jie Yu
Xu-Dong Chen
Lin Chen
Qing-Qing Sun
Hao Zhu
Hong-Liang Lu
Peng Zhou
Shi-Jin Ding
David Wei Zhang
Nanoscale Research Letters, 2017, 12
[8] In Situ Analysis of Oxygen Vacancies and Band Alignment in HfO2/TiN Structure for CMOS Applications
Xu, Da-Peng
Yu, Lin-Jie
Chen, Xu-Dong
Chen, Lin
Sun, Qing-Qing
Zhu, Hao
Lu, Hong-Liang
Zhou, Peng
Ding, Shi-Jin
Zhang, David Wei
NANOSCALE RESEARCH LETTERS, 2017, 12
[9] Study of negative oxygen vacancies in Gd2O3-doped HfO2 thin films as high-k gate dielectrics
Ji, Mei
Wang, Lei
Wei, Feng
Tu, Hailing
Du, Jun
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2010, 25 (07)
[10] Band alignment and thermal stability of HfO2 gate dielectric on SiC
Chen, Q.
Feng, Y. P.
Chai, J. W.
Zhang, Z.
Pan, J. S.
Wang, S. J.
APPLIED PHYSICS LETTERS, 2008, 93 (05)

← 1 2 3 4 5 →