Interaction of Gd and N incorporation on the band structure and oxygen vacancies of HfO2 gate dielectric films

被引：6

作者：

Xiong, Yuhua ^{[1
]}

Tu, Hailing ^{[1
]}

Du, Jun ^{[1
]}

Wang, Ligen ^{[2
,3
]}

Wei, Feng ^{[1
]}

Chen, Xiaoqiang ^{[1
]}

Yang, Mengmeng ^{[1
]}

Zhao, Hongbin ^{[1
]}

Chen, Dapeng ^{[4
]}

Wang, Wenwu ^{[4
]}

机构：

[1] Gen Res Inst Nonferrous Met, Adv Elect Mat Inst, Beijing 100088, Peoples R China

[2] Gen Res Inst Nonferrous Met, Ctr Comp & Simulat Adv Mat, Beijing 100088, Peoples R China

[3] Gen Res Inst Nonferrous Met, State Key Lab Nonferrous Met & Proc, Beijing 100088, Peoples R China

[4] Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2014年 / 251卷 / 08期

基金：

中国国家自然科学基金;

关键词：

dielectrics; electrical properties; oxygen vacancies; thin films; ENERGY-LOSS SPECTROSCOPY; ELECTRONIC-STRUCTURE; ELECTRICAL-PROPERTIES; SILICATE FILMS; OXIDES; NITROGEN; VALENCE; CONSTANTS; ALIGNMENT; OFFSETS;

D O I：

10.1002/pssb.201451303

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The interaction of Gd and N incorporation on the band gap, band offset, and oxygen vacancies of HfO2 high-k gate dielectric films has been investigated. The results show that introducing N (9.7% and 17.4%) and Gd into HfO2 does not dramatically reduce the band gap due to the counteracting effect of Gd doping. Most importantly, Gd and N co-doping increases the conduction band offset of HfO2 and leads to a much better band offset symmetry compared to undoped or Gd-monodoped HfO2. Compared with Gd, N plays a more significant role in improving the band-offset symmetry. The oxygen vacancies are greatly suppressed by Gd and N co-doping under the suitable doping amounts. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1635 / 1638

页数：4

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