Dry Process FOREWARD

被引：0

作者：

Kurihara, Kazuaki ^{[1
]}

Karahashi, Kazuhiro ^{[2
]}

Kinoshita, Keizo ^{[3
]}

Sekine, Makoto ^{[4
]}

Ichikawa, Takashi ^{[1
]}

Ishijima, Tatsuo ^{[5
]}

Shirafuji, Tatsuru ^{[6
]}

机构：

[1] Toshiba Memory Corp, Tokyo, Japan

[2] Osaka Univ, Suita, Osaka, Japan

[3] AIO Core Co Ltd, Photon Elect Technol Res Assoc, Tokyo, Japan

[4] Nagoya Univ, Nagoya, Aichi, Japan

[5] Kanazawa Univ, Kanazawa, Ishikawa, Japan

[6] Osaka City Univ, Osaka, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2019年 / 58卷 / SE期

关键词：

Compendex;

D O I：

10.7567/1347-4065/ab1747

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页数：2

共 11 条

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[9] Atomic layer etching of silicon nitride using infrared annealing for short desorption time of ammonium fluorosilicate
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2017, 56 (06)
[10] Highly selective etching of LaAlSiOx to Si using C4F8/Ar/H2 plasma
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2015, 54 (06)

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