Current Carrying Capacity of Quasi-1D ZrTe3 Van Der Waals Nanoribbons

被引:65
作者
Geremew, A. [1 ]
Bloodgood, M. A. [2 ]
Aytan, E. [1 ]
Woo, B. W. K. [3 ]
Corber, S. R. [3 ]
Liu, G. [1 ]
Bozhilov, K. [4 ]
Salguero, T. T. [2 ]
Rumyantsev, S. [1 ]
Rao, M. P. [3 ]
Balandin, A. A. [1 ]
机构
[1] Univ Calif Riverside, Dept Elect & Comp Engn, Riverside, CA 92521 USA
[2] Univ Georgia, Dept Chem, Athens, GA 30602 USA
[3] Univ Calif Riverside, Dept Mech Engn, Riverside, CA 92521 USA
[4] Univ Calif Riverside, Mat Sci & Engn Program, Riverside, CA 92521 USA
基金
美国国家科学基金会;
关键词
Van der Waals materials; quasi-1D Materials; nanowires; interconnects; current density; ZrTe3; PHASE-TRANSITION; NOISE; DENSITY;
D O I
10.1109/LED.2018.2820140
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Quasi-1D van der Waals materials, such as transition metal trichalcogenides, have strong covalent bonds in one direction and weaker bonds in cross-plane directions. They can be prepared as crystalline nanowires or nanoribbons consisting of 1D atomic threads, i.e., chains. We have examined the current carrying capacity of ZrTe3 nanoribbons using a set of structures fabricated by the shadow mask method. The bulk crystals were synthesized by the chemical vapor transport method and exfoliated onto Si/SiO2 substrates. It was found that ZrTe3 nanoribbons reveal an exceptionally high current density, on the order of similar to 100MA/cm(2), at the peak of the stressing DC current. The low-frequency noise was of 1/f type near room temperature (f is the frequency). The noise amplitude scaled with the resistance, following the trend established for other low-dimensional materials. The high current density in ZrTe3 can be attributed to the single-crystal nature of quasi-1D van der Waals materials.
引用
收藏
页码:735 / 738
页数:4
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